FD1000R33HE3KBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FD1000R33HE3KBPSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
9
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
9
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Number of Elements
2
Configuration
Dual Brake Chopper
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
11500W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
3.3kV
Max Collector Current
1kA
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
3300V
Current - Collector (Ic) (Max)
1000A
Turn On Time
1150 ns
Vce(on) (Max) @ Vge, Ic
3.1V @ 15V, 1000A
Turn Off Time-Nom (toff)
3550 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
190nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FD1000R33HE3KBPSA1 Product Details
FD1000R33HE3KBPSA1 Description
The FD1000R33HE3KBPSA1 is an IHV B 3300 V, 1000 A 190mm chopper IGBT Module with IGBT3 - The best solution for your medium voltage and drive applications.
FD1000R33HE3KBPSA1 Features
High DC Stability
High Short Circuit Capability
Self-Limiting Short Circuit Current
Low switching Losses
Tvj op = 150°C
Low VCEsat with a positive Temperature coefficient
AlSiC Base Plate for increased Thermal Cycling Capability