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APT25SM120B

APT25SM120B

APT25SM120B

Microsemi Corporation

POWER MOSFET - SIC

SOT-23

APT25SM120B Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Operating Temperature-55°C~175°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature175°C
Min Operating Temperature -55°C
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 175W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 175mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 25A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Continuous Drain Current (ID) 25A
Rds On Max 175 mΩ
RoHS StatusRoHS Compliant
In-Stock:1405 items

About APT25SM120B

The APT25SM120B from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features POWER MOSFET - SIC.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the APT25SM120B, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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