Welcome to Hotenda.com Online Store!

logo
userjoin
Home

APT31M100B2

APT31M100B2

APT31M100B2

Microsemi Corporation

MOSFET N-CH 1000V 32A T-MAX

SOT-23

APT31M100B2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series POWER MOS 8™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Pure Matte Tin (Sn)
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 1kV
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 31A
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1040W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.04kW
Case Connection DRAIN
Turn On Delay Time 39 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 380m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 8500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Rise Time 35ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 30V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $13.46000 $13.46
500 $13.3254 $6662.7
1000 $13.1908 $13190.8
1500 $13.0562 $19584.3
2000 $12.9216 $25843.2
2500 $12.787 $31967.5

Related Part Number

SFT1443-H
SFT1443-H
$0 $/piece
IXTK110N20L2
IXTK110N20L2
$0 $/piece
IXTH2R4N120P
IXTH2R4N120P
$0 $/piece
IXFR180N10
IXFR180N10
$0 $/piece

Get Subscriber

Enter Your Email Address, Get the Latest News