IXFR180N10

new-10%

Manufacturer part number:IXFR180N10

Manufacturer:IXYS

Description:IXFR180N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from IXYS stock available on our website

Case Package:SOT-23

Datasheet:IXFR180N10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Current Rating	165A
Pin Count	3
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Power Dissipation-Max	400W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	400W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 90A, 10V
Vgs(th) (Max) @ Id	4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	9400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	165A Tc
Gate Charge (Qg) (Max) @ Vgs	400nC @ 10V
Rise Time	90ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	65 ns
Turn-Off Delay Time	140 ns
Reverse Recovery Time	250 ns
Continuous Drain Current (ID)	165A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.008Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	720A
Dual Supply Voltage	100V
Avalanche Energy Rating (Eas)	3000 mJ
Isolation Voltage	2.5kV
Nominal Vgs	4 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free