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APT34F60B

APT34F60B

APT34F60B

Microsemi Corporation

N-Channel Tube 210m Ω @ 17A, 10V ±30V 6640pF @ 25V 165nC @ 10V 600V TO-247-3

SOT-23

APT34F60B Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time 22 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Terminal Position SINGLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 624W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 37 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 210m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6640pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Rise Time 43ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 34 ns
Turn-Off Delay Time 115 ns
Continuous Drain Current (ID) 36A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 930 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $14.18000 $14.18
10 $12.89300 $128.93
100 $10.95890 $1095.89
500 $9.34728 $4673.64
APT34F60B Product Details

APT34F60B Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 930 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6640pF @ 25V.This device conducts a continuous drain current (ID) of 36A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 115 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 37 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

APT34F60B Features


the avalanche energy rating (Eas) is 930 mJ
a continuous drain current (ID) of 36A
the turn-off delay time is 115 ns
a 600V drain to source voltage (Vdss)


APT34F60B Applications


There are a lot of Microsemi Corporation
APT34F60B applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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