APT37F50S

new-10%

Manufacturer part number:APT37F50S

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 500V 37A D3PAK

Case Package:SOT-23

Datasheet:APT37F50S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 4 weeks ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	POWER MOS 8™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	PURE MATTE TIN
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	520W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	5710pF @ 25V
Current - Continuous Drain (Id) @ 25°C	37A Tc
Gate Charge (Qg) (Max) @ Vgs	145nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	37A
Drain-source On Resistance-Max	0.15Ohm
Pulsed Drain Current-Max (IDM)	115A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	780 mJ
RoHS Status	RoHS Compliant