RFP45N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
RFP45N06 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
45A
Power Dissipation-Max
131W Tc
Element Configuration
Single
Power Dissipation
131W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
28mOhm @ 45A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2050pF @ 25V
Current - Continuous Drain (Id) @ 25°C
45A Tc
Gate Charge (Qg) (Max) @ Vgs
150nC @ 20V
Rise Time
74ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
16 ns
Turn-Off Delay Time
37 ns
Continuous Drain Current (ID)
45A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Input Capacitance
2.05nF
Drain to Source Resistance
28mOhm
Rds On Max
28 mΩ
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.73000
$0.73
500
$0.7227
$361.35
1000
$0.7154
$715.4
1500
$0.7081
$1062.15
2000
$0.7008
$1401.6
2500
$0.6935
$1733.75
RFP45N06 Product Details
RFP45N06 Description
The RFP45N06 is an N-Channel enhancement mode silicon gate power field-effect transistor. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
RFP45N06 Features
45A, 60V
rDS(ON) = 0.028Ω
Temperature Compensating PSPICE?Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175℃ Operating Temperature
RFP45N06 Applications
Switching regulators
Switching converters
Motor drivers
Relay drivers
Drivers for high-power bipolar switching transistors