APT4M120K

new-10%

Manufacturer part number:APT4M120K

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 1.2KV 5A 3-Pin(3+Tab) TO-220

Case Package:SOT-23

Datasheet:APT4M120K Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Pure Matte Tin (Sn)
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC	1.2kV
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	4A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	225W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	225W
Case Connection	DRAIN
Turn On Delay Time	7.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1385pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Rise Time	4.4ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	6.9 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	5A
Drain-source On Resistance-Max	3.8Ohm
Drain to Source Breakdown Voltage	1.2kV
Height	9.19mm
Length	10.26mm
Width	4.72mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free