SIHP22N60S-E3

new-10%

Manufacturer part number:SIHP22N60S-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 600V N-Channel Superjunction TO-220

Case Package:SOT-23

Datasheet:SIHP22N60S-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Packaging	Tube
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Resistance	190mOhm
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Subcategory	FET General Purpose Power
Max Power Dissipation	250W
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
Turn On Delay Time	24 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	190m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2810pF @ 25V
Current - Continuous Drain (Id) @ 25°C	22A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	68ns
Fall Time (Typ)	59 ns
Turn-Off Delay Time	77 ns
Continuous Drain Current (ID)	22A
Threshold Voltage	2V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	65A
Avalanche Energy Rating (Eas)	690 mJ
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free