SPD02N80C3BTMA1

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Manufacturer part number:SPD02N80C3BTMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R

Case Package:SOT-23

Datasheet:SPD02N80C3BTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED, HIGH VOLTAGE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	42W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	42W
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.7 Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id	3.9V @ 120μA
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 100V
Current - Continuous Drain (Id) @ 25°C	2A Tc
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	18 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	2A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	800V
Drain Current-Max (Abs) (ID)	2A
Pulsed Drain Current-Max (IDM)	6A
Avalanche Energy Rating (Eas)	90 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free