APT50GR120JD30

new-10%

Manufacturer part number:APT50GR120JD30

Manufacturer:Microsemi Corporation

Description:IGBT MOD 1200V 84A 417W SOT227

Case Package:SOT-23

Datasheet:APT50GR120JD30 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 2 days ago)
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4
Operating Temperature	-55°C~150°C TJ
Published	2001
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	417W
Number of Elements	1
Configuration	Single
Power - Max	417W
Input	Standard
Collector Emitter Voltage (VCEO)	3.2V
Max Collector Current	84A
Current - Collector Cutoff (Max)	1.1mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	5.55nF
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 50A
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	30V
Input Capacitance (Cies) @ Vce	5.55nF @ 25V
RoHS Status	RoHS Compliant
Lead Free	Lead Free