APT65GP60J

new-10%

Manufacturer part number:APT65GP60J

Manufacturer:Microsemi Corporation

Description:IGBT MOD 600V 130A 431W ISOTOP

Case Package:SOT-23

Datasheet:APT65GP60J Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	2 Weeks
Lifecycle Status	NOT RECOMMENDED FOR NEW DESIGN (Last Updated: 3 weeks ago)
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	1999
Series	POWER MOS 7®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	431W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	130A
Pin Count	4
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	130A
Current - Collector Cutoff (Max)	1mA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	7.4nF
Turn On Time	84 ns
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 65A
Turn Off Time-Nom (toff)	219 ns
IGBT Type	PT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	7.4nF @ 25V
Gate-Emitter Thr Voltage-Max	6V
RoHS Status	RoHS Compliant
Lead Free	Lead Free