APT50GT120JRDQ2

new-10%

Manufacturer part number:APT50GT120JRDQ2

Manufacturer:Microsemi Corporation

Description:IGBT MOD 1200V 72A 379W ISOTOP

Case Package:SOT-23

Datasheet:APT50GT120JRDQ2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	2005
Series	Thunderbolt IGBT®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	UL RECOGNIZED, HIGH RELIABILITY
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	379W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	110A
Pin Count	4
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	379W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	3.7V
Max Collector Current	72A
Current - Collector Cutoff (Max)	400μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	2.5nF
Turn On Time	73 ns
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 50A
Turn Off Time-Nom (toff)	305 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	30V
Input Capacitance (Cies) @ Vce	2.5nF @ 25V
RoHS Status	RoHS Compliant
Lead Free	Lead Free