APTGF50VDA120T3G

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Manufacturer part number:APTGF50VDA120T3G

Manufacturer:Microsemi Corporation

Description:POWER MOD IGBT NPT DL BOOST SP3

Case Package:SOT-23

Datasheet:APTGF50VDA120T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw, Through Hole
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	3
Published	2012
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	20
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	312W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X20
Qualification Status	Not Qualified
Number of Elements	2
Configuration	Dual Boost Chopper
Element Configuration	Dual
Case Connection	ISOLATED
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	70A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3.2V
Input Capacitance	3.45nF
Turn On Time	100 ns
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 50A
Turn Off Time-Nom (toff)	400 ns
IGBT Type	NPT
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.45nF @ 25V
Height	11.5mm
Length	73.4mm
Width	40.8mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free