APT50M80B2VRG

new-10%

Manufacturer part number:APT50M80B2VRG

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 500V 58A 3-Pin(3+Tab) T-MAX

Case Package:SOT-23

Datasheet:APT50M80B2VRG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Number of Pins	3
Packaging	Tube
Published	2012
Series	POWER MOS V®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	FAST SWITCHING, AVALANCHE RATED, HIGH VOLTAGE
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	58A
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power Dissipation	625W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 29A, 10V
Vgs(th) (Max) @ Id	4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	8797pF @ 25V
Current - Continuous Drain (Id) @ 25°C	58A Tc
Gate Charge (Qg) (Max) @ Vgs	423nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	64 ns
Continuous Drain Current (ID)	58A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.08Ohm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free