APT55M65JFLL

new-10%

Manufacturer part number:APT55M65JFLL

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 550V 63A SOT-227

Case Package:SOT-23

Datasheet:APT55M65JFLL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	POWER MOS 7®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	UL RECOGNIZED
Subcategory	FET General Purpose Power
Voltage - Rated DC	550V
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	63A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PUFM-X4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	595W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65m Ω @ 31.5A, 10V
Vgs(th) (Max) @ Id	5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds	9165pF @ 25V
Current - Continuous Drain (Id) @ 25°C	63A Tc
Gate Charge (Qg) (Max) @ Vgs	205nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	63A
Drain-source On Resistance-Max	0.065Ohm
Pulsed Drain Current-Max (IDM)	252A
Avalanche Energy Rating (Eas)	3200 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free