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IXFX98N50P3

IXFX98N50P3

IXFX98N50P3

IXYS

MOSFET (Metal Oxide) N-Channel Tube 50m Ω @ 500mA, 10V ±30V 13100pF @ 25V 197nC @ 10V TO-247-3

SOT-23

IXFX98N50P3 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, Polar3™
Published 2005
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3kW
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 13100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 98A Tc
Gate Charge (Qg) (Max) @ Vgs 197nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 98A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 245A
Avalanche Energy Rating (Eas) 2000 mJ
Height 21.34mm
Length 16.13mm
Width 5.21mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $15.335047 $15.335047
10 $14.467025 $144.67025
100 $13.648137 $1364.8137
500 $12.875601 $6437.8005
1000 $12.146794 $12146.794
IXFX98N50P3 Product Details

IXFX98N50P3 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 13100pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 98A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [65 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 245A.A turn-on delay time of 35 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFX98N50P3 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 98A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 245A.


IXFX98N50P3 Applications


There are a lot of IXYS
IXFX98N50P3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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