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APT60M60JFLL

APT60M60JFLL

APT60M60JFLL

Microsemi Corporation

MOSFET (Metal Oxide) N-Channel Tube 60m Ω @ 35A, 10V ±30V 12630pF @ 25V 289nC @ 10V SOT-227-4, miniBLOC

SOT-23

APT60M60JFLL Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS 7®
Published 2003
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature UL RECOGNIZED
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 70A
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 694W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 694W
Case Connection ISOLATED
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 12630pF @ 25V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 289nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 51 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.06Ohm
Pulsed Drain Current-Max (IDM) 280A
Avalanche Energy Rating (Eas) 3600 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $76.95000 $76.95
10 $72.28300 $722.83
25 $69.01880 $1725.47
100 $65.28820 $6528.82
APT60M60JFLL Product Details

APT60M60JFLL Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3600 mJ.A device's maximal input capacitance is 12630pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 70A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 51 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 280A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 21 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).

APT60M60JFLL Features


the avalanche energy rating (Eas) is 3600 mJ
a continuous drain current (ID) of 70A
the turn-off delay time is 51 ns
based on its rated peak drain current 280A.


APT60M60JFLL Applications


There are a lot of Microsemi Corporation
APT60M60JFLL applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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