APT68GA60LD40

new-10%

Manufacturer part number:APT68GA60LD40

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 600V 121A 3-Pin(3+Tab) TO-264

Case Package:SOT-23

Datasheet:APT68GA60LD40 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	POWER MOS 8™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	LOW CONDUCTION LOSS
Max Power Dissipation	520W
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	520W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	121A
Reverse Recovery Time	22 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	46 ns
Test Condition	400V, 40A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 40A
Turn Off Time-Nom (toff)	304 ns
IGBT Type	PT
Gate Charge	198nC
Current - Collector Pulsed (Icm)	202A
Td (on/off) @ 25°C	21ns/133ns
Switching Energy	715μJ (on), 607μJ (off)
Radiation Hardening	No
RoHS Status	RoHS Compliant