APT75GN120LG

new-10%

Manufacturer part number:APT75GN120LG

Manufacturer:Microsemi Corporation

Description:Trans IGBT Chip N-CH 1.2KV 200A 3-Pin(3+Tab) TO-264

Case Package:SOT-23

Datasheet:APT75GN120LG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Weight	10.6g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	HIGH RELIABILITY
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	833W
Current Rating	200A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	60 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	620 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	200A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.7V
Turn On Time	101 ns
Test Condition	800V, 75A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A
Continuous Collector Current	200A
Turn Off Time-Nom (toff)	925 ns
IGBT Type	Trench Field Stop
Gate Charge	425nC
Current - Collector Pulsed (Icm)	225A
Td (on/off) @ 25°C	60ns/620ns
Switching Energy	8620μJ (on), 11400μJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6.5V
Height	5.21mm
Length	26.49mm
Width	20.5mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free