IKW75N65EL5XKSA1  Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.

IKW75N65EL5XKSA1  Features

Very low collector-emitter saturation voltage VcEsHI

Best-in-Class tradeoff between conduction and switching losses

650V breakdown voltage

Low gate charge Qa

Maximum junction temperature 175°C

Qualified according to JEDEC for target applications

Pb-free lead plating

RoHS compliant

IKW75N65EL5XKSA1  Applications

Uninterruptible power supplies

Solar photovoltaic inverters

Welding machines