APT77N60SC6

new-10%

Manufacturer part number:APT77N60SC6

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 600V 77A 3-Pin(2+Tab) D3PAK

Case Package:SOT-23

Datasheet:APT77N60SC6 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Series	CoolMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	481W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	481W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	41m Ω @ 44.4A, 10V
Vgs(th) (Max) @ Id	3.6V @ 2.96mA
Input Capacitance (Ciss) (Max) @ Vds	13600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	77A Tc
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Rise Time	27ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	77A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	272A
DS Breakdown Voltage-Min	600V
FET Feature	Super Junction
Radiation Hardening	No
RoHS Status	RoHS Compliant