APTCV50H60T3G

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Manufacturer part number:APTCV50H60T3G

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 600V 80A 176W SP3

Case Package:SOT-23

Datasheet:APTCV50H60T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	1997
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	25
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	176W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X25
Qualification Status	Not Qualified
Number of Elements	4
Configuration	Full Bridge
Case Connection	ISOLATED
Power - Max	176W
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.9V
Max Collector Current	80A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	3.15nF
Turn On Time	170 ns
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 50A
Turn Off Time-Nom (toff)	310 ns
IGBT Type	NPT, Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.15nF @ 25V
RoHS Status	RoHS Compliant