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FZ1600R17KF6CB2S2NOSA1

FZ1600R17KF6CB2S2NOSA1

FZ1600R17KF6CB2S2NOSA1

Infineon Technologies

FZ1600R17KF6CB2S2NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FZ1600R17KF6CB2S2NOSA1 Datasheet

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Specifications
Name Value
Type Parameter
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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FZ1600R17KF6CB2S2NOSA1 Product Details

FZ1600R17KF6CB2S2NOSA1 Description


FZ1600R17KF6CB2S2NOSA1 is a type of IHM-B module with Trench/Fieldstop IGBT4 and emitter-controlled diode. It is able to deliver low switching losses and low VCEsat. It is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. Based on its specific characteristics, the FZ1600R17KF6CB2S2NOSA1 IGBT module provides optimum performance for resonant inverter applications, high-power converters, traction drives, and wind turbines.



FZ1600R17KF6CB2S2NOSA1 Features


Extended operating temperature Tvjop

Low VCEsat

Tvjop=150°C

High power density



FZ1600R17KF6CB2S2NOSA1 Applications


Resonant inverter applications

High power converters

Traction drives

Wind turbines


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