APTCV60TLM99T3G

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Manufacturer part number:APTCV60TLM99T3G

Manufacturer:Microsemi Corporation

Description:POWER MODULE IGBT QUAD 600V SP3

Case Package:SOT-23

Datasheet:APTCV60TLM99T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	32
Additional Feature	AVALANCHE ENERGY RATED, ULTRA LOW-ON RESISTANCE
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	90W
Terminal Position	DUAL
Terminal Form	UNSPECIFIED
Pin Count	32
Number of Elements	2
Configuration	Three Level Inverter - IGBT, FET
Case Connection	ISOLATED
Power - Max	90W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.9V
Max Collector Current	50A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	1.6nF
Turn On Time	170 ns
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 30A
Turn Off Time-Nom (toff)	310 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	1.6nF @ 25V
Radiation Hardening	No
RoHS Status	RoHS Compliant