FF600R17KE3B2NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF600R17KE3B2NOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
42 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
130
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2002
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
10
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-XUFM-X10
Number of Elements
2
Configuration
2 Independent
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
4300W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.7kV
Max Collector Current
950A
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Turn On Time
900 ns
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 600A
Turn Off Time-Nom (toff)
1900 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
54nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2
$979.49000
$1958.98
FF600R17KE3B2NOSA1 Product Details
FF600R17KE3B2NOSA1 Description
The FF600R17KE3B2NOSA1 is a 1700V IHM 130mm Dual IGBT Module with IGBT3, enlarged diode and AlSiC base-plate. IGBT, also known as an insulated-gate bipolar transistor, is a type of power semiconductor die. An IGBT power module is created by physically assembling and enclosing many IGBT power semiconductor dies.
FF600R17KE3B2NOSA1 Features
High power density for compact inverter designs
Standardized housing
High reliability and robust module construction
Enlarged Diode for regenerative operation
FF600R17KE3B2NOSA1 Applications
Industry
Motor control and drives
Power converter and inverter for wind turbines
Traction
Commercial, construction and agricultural vehicles (CAV)