APTCV90TL12T3G

new-10%

Manufacturer part number:APTCV90TL12T3G

Manufacturer:Microsemi Corporation

Description:POWER MODULE IGBT QUAD 900V SP3

Case Package:SOT-23

Datasheet:APTCV90TL12T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Published	2012
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	32
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	280W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	32
Number of Elements	4
Configuration	Three Level Inverter - IGBT, FET
Case Connection	ISOLATED
Power - Max	280W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	80A
Current - Collector Cutoff (Max)	1mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	2.77nF
Turn On Time	80 ns
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 50A
Turn Off Time-Nom (toff)	370 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	2.77nF @ 25V
Radiation Hardening	No
RoHS Status	RoHS Compliant