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APTGF50DA120T1G

APTGF50DA120T1G

APTGF50DA120T1G

Microsemi Corporation

Trans IGBT Module N-CH 1.2KV 75A 12-Pin Case SP-1

SOT-23

APTGF50DA120T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1
Transistor Element Material SILICON
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 312W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
Qualification Status Not Qualified
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 312W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3.7V
Max Collector Current 75A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 3.45nF
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 50A
Turn Off Time-Nom (toff) 400 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.45nF @ 25V
RoHS Status RoHS Compliant

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