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APTGF90DA60CT1G

APTGF90DA60CT1G

APTGF90DA60CT1G

Microsemi Corporation

Trans IGBT Module N-CH 600V 110A 12-Pin Case SP-1

SOT-23

APTGF90DA60CT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount, Screw, Through Hole
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 12
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 416W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 12
JESD-30 Code R-XUFM-X7
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 110A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 4.3nF
Turn On Time 36 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 100A
Turn Off Time-Nom (toff) 180 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 4.3nF @ 25V
VCEsat-Max 2.5 V
Radiation Hardening No
RoHS Status RoHS Compliant

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