MWI50-12E7

new-10%

Manufacturer part number:MWI50-12E7

Manufacturer:IXYS

Description:MOD IGBT SIXPACK H-BRDG 1200V E2

Case Package:SOT-23

Datasheet:MWI50-12E7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	E2
Number of Pins	2
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Published	2007
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	11
Terminal Finish	Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	UL REGONIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	350W
Terminal Position	UPPER
Terminal Form	PIN/PEG
Base Part Number	MWI
Pin Count	17
JESD-30 Code	R-XUFM-P11
Number of Elements	6
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	350W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.4V
Max Collector Current	90A
Current - Collector Cutoff (Max)	800μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	3.8nF
Turn On Time	130 ns
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 50A
Turn Off Time-Nom (toff)	710 ns
IGBT Type	NPT
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	3.8nF @ 25V
RoHS Status	RoHS Compliant