APTGF90DH60T3G

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Manufacturer part number:APTGF90DH60T3G

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 600V 110A 416W SP3

Case Package:SOT-23

Datasheet:APTGF90DH60T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	3
Transistor Element Material	SILICON
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	11
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	416W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X11
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	2
Configuration	Asymmetrical Bridge
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	416W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.5V
Max Collector Current	110A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	4.3nF
Turn On Time	36 ns
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 100A
Turn Off Time-Nom (toff)	180 ns
IGBT Type	NPT
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	4.3nF @ 25V
RoHS Status	RoHS Compliant