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APTGL90SK120T1G

APTGL90SK120T1G

APTGL90SK120T1G

Microsemi Corporation

Trans IGBT Module N-CH 1.2KV 110A 10-Pin Case SP-1

SOT-23

APTGL90SK120T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 10
Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 385W
Number of Elements 1
Configuration Single
Power - Max 385W
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 110A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 4.4nF
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 75A
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 4.4nF @ 25V
VCEsat-Max 2.25 V
RoHS Status RoHS Compliant

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