FF450R12ME4EB11BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF450R12ME4EB11BPSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Published
2002
Series
EconoDUAL™ 3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
11
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X11
Operating Temperature (Max)
150°C
Number of Elements
2
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Case Connection
ISOLATED
Polarity/Channel Type
N-CHANNEL
Turn On Time
290 ns
Collector Current-Max (IC)
675A
Turn Off Time-Nom (toff)
740 ns
Collector-Emitter Voltage-Max
1200V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$209.93000
$209.93
12
$201.06250
$2412.75
FF450R12ME4EB11BPSA1 Product Details
FF450R12ME4EB11BPSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input