APTGT75DH120TG

new-10%

Manufacturer part number:APTGT75DH120TG

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 1.2KV 110A 20-Pin Case SP-4

Case Package:SOT-23

Datasheet:APTGT75DH120TG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP4
Number of Pins	20
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2006
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	14
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Max Power Dissipation	357W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	14
JESD-30 Code	R-XUFM-X14
Qualification Status	Not Qualified
Number of Elements	2
Configuration	Asymmetrical Bridge
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	357W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	110A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	5.34nF
Turn On Time	335 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A
Turn Off Time-Nom (toff)	610 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Input Capacitance (Cies) @ Vce	5.34nF @ 25V
RoHS Status	RoHS Compliant