APTGT100DDA60T3G

new-10%

Manufacturer part number:APTGT100DDA60T3G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 600V 150A 32-Pin Case SP-3

Case Package:SOT-23

Datasheet:APTGT100DDA60T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Published	2006
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	25
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	340W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X25
Qualification Status	Not Qualified
Number of Elements	2
Configuration	Dual Boost Chopper
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	340W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.9V
Max Collector Current	150A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	6.1nF
Turn On Time	180 ns
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 100A
Turn Off Time-Nom (toff)	370 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	6.1nF @ 25V
RoHS Status	RoHS Compliant