FZ3600R12KE3NOSA1

new-10%

FZ3600R12KE3NOSA1

Manufacturer part number:FZ3600R12KE3NOSA1

Manufacturer:Infineon Technologies AG

Description:FZ3600R12KE3NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website

Case Package:SOT-23

Datasheet:FZ3600R12KE3NOSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	AG-IHM190-2-1
ECCN (US)	EAR99
Maximum Collector-Emitter Voltage (V)	1200
Typical Collector Emitter Saturation Voltage (V)	1.7
Maximum Gate Emitter Voltage (V)	±20
Maximum Power Dissipation (mW)	15000000
Maximum Continuous Collector Current (A)	4700
Maximum Gate Emitter Leakage Current (uA)	0.4
Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	125
Supplier Package	IHM190-2
Military	No
Mounting	Screw
Package Height	38
Package Length	190
Package Width	140
PCB changed	9
Package	Bulk
Mfr	Infineon Technologies
Product Status	Active
Packaging	Tray
Operating Temperature	-40°C ~ 125°C (TJ)
Series	-
Part Status	Obsolete
Pin Count	9
Configuration	Triple Common Emitter Common Gate
Power - Max	15 kW
Input	Standard
Current - Collector Cutoff (Max)	5 mA
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	4.7 kA
Channel Type	N
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 3.6kA
IGBT Type	-
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	260000 pF @ 25 V
RoHS Status	RoHS non-compliant

Quantity	Unit Price	Ext. Price
1	$1244.36000	$1244.36
500	$1231.9164	$615958.2
1000	$1219.4728	$1219472.8
1500	$1207.0292	$1810543.8
2000	$1194.5856	$2389171.2
2500	$1182.142	$2955355