APTGT100H60T3G

new-10%

Manufacturer part number:APTGT100H60T3G

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 600V 150A 340W SP3

Case Package:SOT-23

Datasheet:APTGT100H60T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	32
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Published	2006
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	25
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	340W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X25
Number of Elements	4
Configuration	Full Bridge Inverter
Case Connection	ISOLATED
Turn On Delay Time	115 ns
Power - Max	340W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Turn-Off Delay Time	225 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	150A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.5V
Input Capacitance	6.1nF
Turn On Time	180 ns
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 100A
Turn Off Time-Nom (toff)	370 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	6.1nF @ 25V
VCEsat-Max	1.9 V
Height	11.5mm
Length	73.4mm
Width	40.8mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free