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FS200R12PT4BOSA1

  • FS200R12PT4BOSA1
  • FS200R12PT4BOSA1

FS200R12PT4BOSA1

FS200R12PT4BOSA1

Infineon Technologies

FS200R12PT4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FS200R12PT4BOSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 20
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 20
JESD-30 Code R-XUFM-X20
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 1000W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 280A
Turn On Time 190 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
Turn Off Time-Nom (toff) 600 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 14nF @ 25V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $237.958400 $237.9584
10 $224.489057 $2244.89057
100 $211.782129 $21178.2129
500 $199.794461 $99897.2305
1000 $188.485341 $188485.341
FS200R12PT4BOSA1 Product Details

FS200R12PT4BOSA1 Description


FS200R12PT4BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FS200R12PT4BOSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 1mA. The FS200R12PT4BOSA1 has 20 pins and it is available in POWIR? 62 Module packaging way. FS200R12PT4BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



FS200R12PT4BOSA1 Features


  • Input Capacitance (Cies) @ Vce: 14nF @ 25V

  • IGBT Type: Trench Field Stop

  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A

  • Current - Collector (Ic) (Max): 280A

  • Voltage - Collector Emitter Breakdown (Max): 1200V



FS200R12PT4BOSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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