APTGT150DA120TG

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Manufacturer part number:APTGT150DA120TG

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 1.2KV 220A 20-Pin Case SP-4

Case Package:SOT-23

Datasheet:APTGT150DA120TG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SP4
Number of Pins	4
Transistor Element Material	SILICON
Published	2006
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	690W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	12
JESD-30 Code	R-XUFM-X12
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	690W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	220A
Current - Collector Cutoff (Max)	350μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	10.7nF
Turn On Time	335 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 150A
Turn Off Time-Nom (toff)	610 ns
IGBT Type	NPT
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	10.7nF @ 25V
RoHS Status	RoHS Compliant