FF150R12KE3GB2HOSA1 Description

FF150R12KE3GB2HOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FF150R12KE3GB2HOSA1 operates between -40°C~150°C TJ, and its Max Collector Current is 400A. The FF150R12KE3GB2HOSA1 has 3 pins and it is available in Tube packaging way. FF150R12KE3GB2HOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.

FF150R12KE3GB2HOSA1 Features

• Input Capacitance (Cies) @ Vce: 14nF @ 25V

• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A

• Current - Collector (Ic) (Max): 320A

• Current - Collector Cutoff (Max): 5mA

• Voltage - Collector Emitter Breakdown (Max): 1200V

FF150R12KE3GB2HOSA1 Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial