APTGV15H120T3G

new-10%

Manufacturer part number:APTGV15H120T3G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 1.2KV 25A 32-Pin Case SP-3

Case Package:SOT-23

Datasheet:APTGV15H120T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SP3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2007
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	25
Terminal Finish	TIN SILVER COPPER
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	115W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X25
Qualification Status	Not Qualified
Number of Elements	4
Configuration	Full Bridge Inverter
Case Connection	ISOLATED
Power - Max	115W
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	25A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	1.1nF
Turn On Time	120 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 15A
Turn Off Time-Nom (toff)	640 ns
IGBT Type	NPT, Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	1.1nF @ 25V
RoHS Status	RoHS Compliant