APTGV50H120BTPG

new-10%

Manufacturer part number:APTGV50H120BTPG

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 1.2KV 75A/75A/70A/70A 21-Pin Case SP-6P

Case Package:SOT-23

Datasheet:APTGV50H120BTPG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	6
Transistor Element Material	SILICON
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	21
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	270W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	21
JESD-30 Code	R-XUFM-X21
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	5
Configuration	Boost Chopper, Full Bridge
Case Connection	ISOLATED
Power - Max	270W
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	75A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	3.6nF
Turn On Time	140 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 50A
Turn Off Time-Nom (toff)	610 ns
IGBT Type	NPT, Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.6nF @ 25V
RoHS Status	RoHS Compliant