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APTM100SKM90G

APTM100SKM90G

APTM100SKM90G

Microsemi Corporation

MOSFET N-CH 1000V 78A SP6

SOT-23

APTM100SKM90G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 5
JESD-30 Code R-XUFM-X5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1250W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25kW
Case Connection ISOLATED
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 39A, 10V
Vgs(th) (Max) @ Id 5V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 20700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 78A Tc
Gate Charge (Qg) (Max) @ Vgs 744nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 155 ns
Continuous Drain Current (ID) 78A
Gate to Source Voltage (Vgs) 30V
Avalanche Energy Rating (Eas) 3000 mJ
Radiation Hardening No
RoHS Status RoHS Compliant

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