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APTML10UM09R004T1AG

APTML10UM09R004T1AG

APTML10UM09R004T1AG

Microsemi Corporation

Trans MOSFET N-CH 100V 154A 12-Pin Case SP-1

SOT-23

APTML10UM09R004T1AG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 12
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max 480W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 480W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 69.5A, 10V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 9875pF @ 25V
Current - Continuous Drain (Id) @ 25°C 154A Tc
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 154A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 67A
Pulsed Drain Current-Max (IDM) 430A
Avalanche Energy Rating (Eas) 3000 mJ
Radiation Hardening No
RoHS Status RoHS Compliant

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