APTML20UM18R010T1AG

new-10%

Manufacturer part number:APTML20UM18R010T1AG

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 200V 109A 12-Pin Case SP-1

Case Package:SOT-23

Datasheet:APTML20UM18R010T1AG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP1
Number of Pins	1
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2016
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	12
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Power Dissipation-Max	480W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	480W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	19m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	9880pF @ 25V
Current - Continuous Drain (Id) @ 25°C	109A Tc
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	109A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	44A
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	3000 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant