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APTML50UM90R020T1AG

APTML50UM90R020T1AG

APTML50UM90R020T1AG

Microsemi Corporation

Trans MOSFET N-CH 500V 52A 12-Pin Case SP-1

SOT-23

APTML50UM90R020T1AG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form THROUGH-HOLE
Pin Count 12
JESD-30 Code R-XUFM-T6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 568W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 568W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 108m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 7600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 52A Tc
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 52A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 3000 mJ
Radiation Hardening No
RoHS Status RoHS Compliant

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