JAN2N1485 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JAN2N1485 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-233AA, TO-8-3 Lens Top Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/207
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.95
Max Power Dissipation
1.75W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Reference Standard
MIL-S-19500/180D
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
35 @ 750mA 4V
Current - Collector Cutoff (Max)
15μA ICBO
Vce Saturation (Max) @ Ib, Ic
750mV @ 40mA, 750mA
Current - Collector (Ic) (Max)
3A
Transition Frequency
1.25MHz
Collector Base Voltage (VCBO)
60V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$202.50000
$202.5
500
$200.475
$100237.5
1000
$198.45
$198450
1500
$196.425
$294637.5
2000
$194.4
$388800
2500
$192.375
$480937.5
JAN2N1485 Product Details
JAN2N1485 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 35 @ 750mA 4V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 40mA, 750mA.Parts of this part have transition frequencies of 1.25MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
JAN2N1485 Features
the DC current gain for this device is 35 @ 750mA 4V the vce saturation(Max) is 750mV @ 40mA, 750mA a transition frequency of 1.25MHz
JAN2N1485 Applications
There are a lot of Microsemi Corporation JAN2N1485 applications of single BJT transistors.