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JAN2N2222AUA

  • JAN2N2222AUA
  • JAN2N2222AUA

JAN2N2222AUA

JAN2N2222AUA

Microsemi Corporation

JAN2N2222AUA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N2222AUA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SMD
Number of Pins 4
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/255
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Max Power Dissipation 500mW
Power - Max 500mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 800mA
Collector Base Voltage (VCBO) 75V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JAN2N2222AUA Product Details

JAN2N2222AUA Overview


DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.A maximum collector current of 800mA volts is possible.

JAN2N2222AUA Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA

JAN2N2222AUA Applications


There are a lot of Microsemi Corporation JAN2N2222AUA applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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