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JAN2N2432A

JAN2N2432A

JAN2N2432A

Microsemi Corporation

JAN2N2432A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N2432A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~175°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/313
JESD-609 Code e0
Pbfree Code no
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation300mW
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count3
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation300mW
Case Connection COLLECTOR
Power - Max 360mW
Transistor Application CHOPPER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1mA 5V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA
Transition Frequency 20MHz
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 18V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:3143 items

JAN2N2432A Product Details

JAN2N2432A Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 1mA 5V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 150mV @ 500μA, 10mA.Keeping the emitter base voltage at 18V allows for a high level of efficiency.A transition frequency of 20MHz is present in the part.A maximum collector current of 100mA volts is possible.

JAN2N2432A Features


the DC current gain for this device is 80 @ 1mA 5V
the vce saturation(Max) is 150mV @ 500μA, 10mA
the emitter base voltage is kept at 18V
a transition frequency of 20MHz

JAN2N2432A Applications


There are a lot of Microsemi Corporation JAN2N2432A applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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