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MMBT5962

  • MMBT5962
  • MMBT5962

MMBT5962

MMBT5962

ON Semiconductor

MMBT5962 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT5962 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 39 Weeks
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 100mA
Base Part Number MMBT5962
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 600 @ 10mA 5V
Current - Collector Cutoff (Max) 2nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 8V
hFE Min 600
Height 930μm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
MMBT5962 Product Details

MMBT5962 PNP Amplifier Description


Because the MMBT5962 is an NPN transistor, the collector and emitter are open (reverse biased) while the base pin is maintained at the ground and closed (forward-biased) when a signal is applied to the base pin. MMBT5962 has a gain value of 900 (usually), with a maximum of 1200. This number influences the amplification capacity, which with this transistor is quite high.



MMBT5962 PNP Amplifier Features


  • Higher gain value

  • Low noise

  • Pb free device

  • Low current (max. 100nA)

  • Low voltage (max. 30V)

  • Collector-Emitter Voltage: 30 Vdc

  • Collector-Base Voltage: 35 Vdc

  • Emitter-Base Voltage: 3.0 Vdc

  • DC current gain: 1200 hFe (max.)

  • Operating and Junction Temperature: –55 to +150 °C



MMBT5962 PNP Amplifier Applications


  • Low Noise Audio Amplifications

  • High Gain Studios

  • Switches

  • Darlington Pairs

  • Optical Fiber Communications

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